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8 pin dip high speed 1mbit/s transistor photocoupler everlight electronics co., ltd. 1 http://www.everlight.com document no dpc-0000018 rev.1 february 9, 2009 6n135 6n136 el4 50 2 features ? high speed 1mbit/s ? high isolation voltage between input and output (viso=5000 vrms ) ? guaranteed performance from 0c to 70c ? wide operating temperature range of -55c to 100c ? pb free and rohs compliant ? ul approved (no. 214129) ? vde approved (no. 132249) ? semko approved ? nemko approved ? demko approved ? fimko approved ? csa approved (no. 2037145) description the 6n135, 6n136 and el4502 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. a separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base- collector capacitance of the input transistor. schematic the devices are packaged in an 8-pin dip package and available in wide-lead spacing and smd option. 1 1 5 6 7 8 8 2 3 4 2 7 applications 3 6 ? line receivers ? telecommunication equipments 4 5 el4502 6n135 / 6n136 8. v cc pin configuration 1. no connection 2. anode 3. cathode 4. no connection 5. gnd 6. vout 7. no connection pin configuration 1. no connection 2. anode 3. cathode 4. no connection 5. gnd 6. vout 7. v b 8. v cc ? power transistor isolation in motor drives ? replacement for low speed phototransistor photo couplers ? feedback loop in switch-mode power supplies ? home appliances ? high speed logic ground isolation
8 pin dip high speed 1mbit/s transistor photocoupler everlight electronics co., ltd. 2 http://www.everlight.com document no dpc-0000018 rev.1 february 9, 2009 6n135 6n136 el4 50 2 absolute maximum ratings (t a =25c) parameter symbol rating unit forward current i f 25 ma peak forward current (50% duty, 1ms p.w) i fp 50 ma peak transient current ( 1 s p.w,300pps) i ftrans 1 a reverse voltage v r 5 v input power dissipation p in 45 mw power dissipation p o 100 mw emitter-base reverse voltage 6n135 6n136 v ebr 5 v base current 6n135 6n136 i b 5 ma average output current i o(avg) 8 ma peak output current i o(pk) 16 ma output voltage v o -0.5 to 20 v output supply voltage v cc -0.5 to 30 v isolation voltage *1 v iso 5000 v rms operating temperature t opr -55 ~ +100 c storage temperature t stg -55 ~ +125 c soldering temperature *2 t sol 260 c notes *1 ac for 1 minute, r.h.= 40 ~ 60% r.h. in this test, pins 1, 2, 3, 4 are shorted together, and pins 5, 6, 7, 8 are shorted together. *2 for 10 seconds.
8 pin dip high speed 1mbit/s transistor photocoupler everlight electronics co., ltd. 3 http://www.everlight.com document no dpc-0000018 rev.1 february 9, 2009 6n135 6n136 el4 50 2 electrical characteristics (t a =0 to 70c unless specified otherwise) input parameter symbol min. typ.* max. unit conditions forward voltage v f - 1.45 1.8 v i f = 16ma reverse voltage v r 5.0 - - v i r = 10 a temperature coefficient of forward voltage v f / t a - -1.9 - mv/c i f =16ma output parameter symbol min. typ.* max. unit conditions - 0.001 0.5 i f =0ma, v o =v cc =5.5v, t a =25c - 0.01 1 i f =0ma, v o =v cc =15v, t a =25c logic high output current i oh - - 50 a i f =0ma, v o =v cc =15v logic low supply current i ccl - 140 200 a i f =16ma, v o =open, v cc =15v - 0.01 1 i f =0ma, v o =open, v cc =15v, t a =25c logic high supply current i cch - - 2 a i f =0ma, v o =open, v cc =15v * typical values at t a = 25c
8 pin dip high speed 1mbit/s transistor photocoupler everlight electronics co., ltd. 4 http://www.everlight.com document no dpc-0000018 rev.1 february 9, 2009 6n135 6n136 el4 50 2 transfer characteristics (t a =0 to 70c unless specified otherwise) parameter symbol min. typ.* max. unit conditions 6n135 7 - 50 6n136 el4502 19 - 50 i f = 16ma ,v o = 0.4v, v cc =4.5v, t a =25c 6n135 5 - - current transfer ratio 6n136 el4502 ctr 15 - - % i f = 16ma ,v o = 0.5v, v cc =4.5v 6n135 - 0.18 0.4 i f = 16ma ,i o = 1.1ma, v cc =4.5v, t a =25c 6n136 el4502 - 0.18 0.4 i f = 16ma ,i o = 3ma, v cc =4.5v, t a =25c 6n135 - - 0.5 i f = 16ma ,i o = 0.8ma, v cc =4.5v logic low output voltage 6n136 el4502 v ol - - 0.5 v i f =16ma ,i o =2.4ma, v cc =4.5v switching characteristics (t a =0 to 70c unless specified otherwise, i f =16ma, vcc=5v) parameter symbol min. typ.* max. unit conditions - 0.35 1.5 r l =4.1k ?, t a =25c 6n135 - - 2.0 r l =4.1k ? - 0.35 0.8 r l =1.9k ?, t a =25c propagation delay time to logic low (fig.8) 6n136 el4502 tphl - - 1.0 s r l =1.9k ? - 0.5 1.5 r l =4.1k ?, t a =25c 6n135 - - 2.0 r l =4.1k ? - 0.3 0.8 r l =1.9k ?, t a =25c propagation delay time to logic high (fig.8) 6n136 el4502 tplh - - 1.0 s r l =1.9k ? 6n135 1,000 - - i f = 0ma , v cm =10vp-p, r l =4.1k ?, t a =25c common mode transient immunity at logic high (fig.9) *3 6n136 el4502 cm h 1,000 - - v/s i f = 0ma , v cm =10vp-p, r l =1.9k ?, t a =25c 6n135 1,000 - - i f = 16ma , v cm =10vp-p, r l =4.1k ?, t a =25c common mode transient immunity at logic low (fig.9) *3 6n136 el4502 cm l 1,000 - - v/s i f = 16ma , v cm =10vp-p, r l =1.9k ?, t a =25c * typical values at t a = 25c
pin dip high speed 1mbit/s 8 photocoupler everlight electronics co., ltd. 5 http://www.everlight.com document no dpc-0000018 rev.1 february 9, 2009 transistor 6n135 6n136 el4 50 2 typical performance curves
pin dip high speed 1mbit/s photocoupler 8 transistor everlight electronics co., ltd. 6 http://www.everlight.com document no dpc-0000018 rev.1 february 9, 2009 6n135 6n136 el4 50 2 figure 8 switching time test circuit & waveform figure 9 transient immunity test circuit &
8 pin dip high speed 1mbit/s transistor photocoupler everlight electronics co., ltd. 7 http://www.everlight.com document no dpc-0000018 rev.1 february 9, 2009 6n135 6n136 el4 50 2 note: *3 common mode transient immunity in logic high level is the maximum tolerable (positive) dvcm/dt on the leading edge of the common mode pulse signal vcm, to assure that the output will remain in a logic high state (i.e., vo > 2.0v). common mode transient immunity in logic low level is the maximum tolerable (negative) dvcm/dt on the trailing edge of the common mode pulse signal, vcm, to a ssure that the output will remain in a logic low state (i.e., vo < 0.8v). order information part number 6n13xy(z)-v or el4502y(z)-v note x = part no. (x = 5 or 6) y = lead form option (s, s1, m or none) z = tape and reel option (ta, tb or none) v = vde (optional) option description packing quantity none standard dip-8 45 units per tube m wide lead bend (0.4 inch spacing) 45 units per tube s (ta) surface mount lead form + ta tape & reel option 1000 units per reel s (tb) surface mount lead form + tb tape & reel option 1000 units per reel s1 (ta) surface mount lead form (low profile ) + ta tape & reel option 1000 units per reel s1 (tb) surface mount lead form (low profile ) + tb tape & reel option 1000 units per reel
8 pin dip high speed 1mbit/s transistor everlight electronics co., ltd. 8 http://www.everlight.com document no dpc-0000018 rev.1 february 9, 2009 6n135 6n136 el4 50 2 photocoupler package drawing (dimensions in mm) standard dip type option m type
8 pin dip high speed 1mbit/s transistor photocoupler everlight electronics co., ltd. 9 http://www.everlight.com document no dpc-0000018 rev.1 february 9, 2009 6n135 6n136 el4 50 2 option s type option s1 type
transistor everlight electronics co., ltd. 10 http://www.everlight.co m document no dpc-0000018 rev.1 february 9, 2009 6n135 6n136 el4 8 pin dip high speed 1mbit/s photocoupler 50 2 recommended pad layout for surface mount leadform device marking el 4502 ywwv el 6n136 ywwv notes 4502 6n136 denotes device number y denotes 1 digit year code ww denotes 2 digit week code v denotes vde (optional)
8 pin dip high speed 1mbit/s transistor photocoupler everlight electronics co., ltd. 11 http://www.everlight.co m document no dpc-0000018 rev.1 february 9, 2009 6n135 6n136 el4 50 2 tape & reel packing specifications ape dimensions dimension no. a b do d1 e f option ta option tb direction of feed from reel direction of feed from reel t dimension(mm) 10.40.1 10.00.1 1. 50.1 1.50.1 1.750.1 7.50.1 dimension no. po p1 p2 t w k 12. 00.1 2.00.1 0.40.1 16.0+0.3/ -0.1 4.50.1 dimension(mm) 4.00.1
8 pin dip high speed 1mbit/s transistor photocoupler everlight electronics co., ltd. 12 http://www.everlight.co m document no dpc-0000018 rev.1 february 9, 2009 6n135 6n136 el4 50 2 time ( s ) 150 c 1-3 c/sec max 70 ? 170 sec 2 00 c 217 c 260 c (peak,10 sec max) em p solder reflow t perature rofile >255 c ( 30s max ) 1-3 c/sec max 60 ? 140 sec
8 pin dip high speed 1mbit/s transistor photocoupler everlight electronics co., ltd. 13 http://www.everlight.co m document no dpc-0000018 rev.1 february 9, 2009 6n135 6n136 el4 50 2 disclaimer . above specification may be c hanged without notice. everlight will re serve authority on material change for above specification. . when using this product, please obs erve the absolute maximum ratings and the instructions for using outlined in these specification sheets. everlight assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. ication sheets incl ude materials protected under copyright of everlight corporation. please 1 2 3. these specif don?t reproduce or cause anyone to reproduc e them without everlight?s consent.

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